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BAS321

NXP

General purpose diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BAS321 General purpose diode Product specification 1999 Feb 0...


NXP

BAS321

File DownloadDownload BAS321 Datasheet


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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BAS321 General purpose diode Product specification 1999 Feb 09 Philips Semiconductors Product specification General purpose diode FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 200 V Repetitive peak reverse voltage: max. 250 V Repetitive peak forward current: max. 625 mA. handbook, halfpage BAS321 PINNING PIN 1 2 cathode anode DESCRIPTION 1 2 APPLICATIONS General purpose switching in e.g. surface mounted circuits. DESCRIPTION The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. Marking code: A7 MAM406 Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current see Fig. 2; note 1 tp < 0.5 ms; δ ≤ 0.25 square wave; Tj = 25 °C prior to surge; see Fig. 4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1.7 300 +150 150 A A A mW °C °C CONDITIONS MIN. − − − − MAX. 250 200 250 625 V V mA mA UNIT 1999 Feb 09 2 Philips Semiconductors Product specification General pur...




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