General purpose controlled avalanche double diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (dou...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes
Product data sheet Supersedes data of 2001 Oct 10
2003 Mar 20
NXP Semiconductors
General purpose controlled avalanche (double) diodes
Product data sheet
BAS29; BAS31; BAS35
FEATURES
Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 90 V Repetitive peak reverse voltage: max. 110 V Repetitive peak forward current: max. 600 mA Repetitive peak reverse current: max. 600 mA.
PINNING
DESCRIPTION
PIN
BAS29
BAS31
BAS35
1 anode
anode
cathode (k1)
2 not connected cathode
cathode (k2)
3 cathode
common connection
common anode
APPLICATIONS
General purpose switching in e.g. surface mounted circuits.
handbook, halfpa2ge
1 2
1
DESCRIPTION
General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode.
MARKING
TYPE NUMBER BAS29 BAS31 BAS35
MARKING CODE(1) L20 or ∗A8 L21 or ∗V1 L22 or ∗V2
Note
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China.
3
a. Simplified outline.
3
c. BAS31 diode.
2 n.c.
12
1
3
b. BAS29 diode.
3
d. BAS35 diode.
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20
2
NXP Semiconductors
General purpose controlled ...
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