BAS16TT1

BAS16TT1 Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE Preferred Device THERMAL CHARACTERISTICS Characteristic Total Power Dissipation, TA = 25°C (1) 3 Symbol PD TJ, Tstg RθJA Max 150 –55 to +150 833 Unit mW °C °C/W 2 1 CASE 463 SOT–416/SC–75 STYLE 2 Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Ambient (1) Device mounted on FR–4 glass epoxy printed circuit board using the minimum recommended footpad. DEVICE MARKING A6 ORDERING INFORMATION Device BAS16TT1 Package SOT–416 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2000 1 March, 2000 – Rev. 0 Publication Order Number: BAS16TT1/D BAS16TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) Forward ...