BAS16S

Silicon Switching Diode For high-speed switching applications Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAS16... BAS16 BAS16W !  BAS16-02L BAS16-02V BAS16-02W BAS16-03W  BAS16S BAS16U $# , , " ,! ! BAS16-07L4 " ,  ! , Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W * Preliminary Data Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 Configuration single single, leadless single single single parallel pair, leadless parallel triple parallel triple single 1Pb-containing package may be available upon special request Marking A6s A6 6 A6 white B 6A A6s A6s A6s 1 2009-09-28 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current BAS16 VR VRM IF BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16S BAS16U BAS16W Non-repetitive peak surge forward current t = 1 µs, BAS16/ S/ U/ W/ -03W t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IFSM Ptot Tj Tstg BAS16... Value 80 85 250 200 200 250 200 200 250 4.5 2.5 0.5 370 250 250 250 250 250 250 150 -65 ...150 Unit V mA A mW °C 2 2009-09-28 BAS16... Thermal Resistance Parameter Junction - soldering point1) BAS16, BAS16S BAS16-02L, -...