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BAS16HT1

ON Semiconductor

Switching Diode

BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak F...


ON Semiconductor

BAS16HT1

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BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc 1 CATHODE 2 ANODE http://onsemi.com THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR-4 Minimum Pad. Symbol PD Max 200 1.57 RθJA TJ, Tstg 635 −55 to 150 Unit mW mW/°C °C/W °C 1 SOD−323 CASE 477 STYLE 1 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit MARKING DIAGRAM OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) IR − − − V(BR) VF − − − − CD VFR trr QS − − − − 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 − Vdc mV µAdc A6 M A6 M = Specific Device Code = Date Code ORDERING INFORMATION Device BAS16HT1 Package SOD−323 Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specific...




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