BAR89

BAR89... Silicon PIN Diode
Optimized for antenna switches in hand held applications
Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF)
Low forward resistance (typ. 0.8  @ IF = 10mA)
Very low signal distortion BAR89-02L 1 2 Type BAR89-02L Package TSLP-2-1 Configuration single, leadless LS(nH) Marking 0.4 RS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts
133°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) , BAR89-02L 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 80 100 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Value 65 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 10 mA IF = 100 mA VF 0.83 0.95 0.9 1.1 V IR 50 nA V(BR) 80 V typ. max. Unit 2 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resista...