Silicon RF Switching Diodes
BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt inse...
Description
BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR81
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking BBs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 30 100 150 -55 ... 125 -55 ... 150
Unit V mA °C
Operating temperature range Storage temperature
1
Aug-21-2001
BAR81
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA VF 0.93 1 IR 20 typ. max.
Unit
nA V
AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls 0.15 nH rf CT 0.6 0.57 0.7 pF
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
2
Aug-21-2001
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