BAR80
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking AAs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 35 100 150 -55 ... 1...
