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BAR80 Dataheets PDF



Part Number BAR80
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
Datasheet BAR80 DatasheetBAR80 Datasheet (PDF)

BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm S.

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BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A02, 27.02.95 BAR 80 Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. Value typ. 0.92 1 0.92 0.5 0.14 max. Unit nA IR 20 VF 1 V pF 0.6 1.6 1.3 Ω 0.7 nH - CT f = 100MHz rf Ls IF = 5 mA Series inductance to ground Application information Shunt signal isolation 23 0.15 - dB dB - IF = 10 mA, f = 2 GHz, RG = RL = 50 Ω Shunt insertion loss VR = 5 V, f = 2 GHz, RG = RL = 50 Ω IL Configuration of the shunt-diode -A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF Semiconductor Group 2 Edition A02, 27.02.95 BAR 80 Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz mA I F TS TA TS TA Dioden capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 Edition A02, 27.02.95 BAR 80 Permissible pulse load RthJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) K/W R thJS I F max _______ IF DC tp t p Semiconductor Group 4 Edition A02, 27.02.95 .


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