BAR64-03W

BAR64-03W Low signal distortion, surface mount RF PIN diode Product description This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics. Feature list Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) Very low capacitance C = 0.2 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches and attenuators Wireless communication High speed data networks Device information Table 1 Part information Product name / Ordering code BAR64-03W / BAR6403WE6327HTSA1 Package SOD323 Configuration Single, with leads Marking Pieces / Reel blue 2 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 BAR64-03W Low signal d...