BAR63-02W

BAR 63-02W Silicon PIN Diode PIN diode for high speed switching of RF signals Low forward resistance, small capacitance small inductance Very low capacitance For frequencies up to 3 GHz 2 1 VES05991 Type BAR 63-02W Marking Ordering Code G Q62702-A1211 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 -55 ...+150 -55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 220 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63-02W Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 10 1.2 Unit V(BR) IR VF 50 - V µA V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 0.09 0.3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance Ω τrr 1.2 1 75 0.6 2 µs nH I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63-02W Forward current IF = ...