®
BAR28
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-o...
®
BAR28
SMALL SIGNAL
SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic
t(s) range.
Matched batches are available on request.
duc ABSOLUTE RATINGS (limiting values)
Pro t(s) Symbol te c VRRM le du IF so ro IFSM b P Tstg - O te Tj t(s) ole TL
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Ta = 25°C
Surge non Repetitive Forward Current* tp ≤ 1s
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
c bs THERMAL RESISTANCE
du - O Symbol
Test Conditions
ro ) Rth(j-a) Junction-ambient*
te P ct(s ELECTRICAL CHARACTERISTICS
le du STATIC CHARACTERISTICS
bso Pro Symbol O te VBR
le VF * * Obso IR * *
Test Conditions Tamb = 25°CIR = 10µA Tamb = 25°CIF = 1mA Tamb = 25°CIF = 15mA Tamb = 25°CVR = 50V
DO 35 (Glass)
Value
Unit
70
V
15
mA
50
mA
- 65 to 200
°C
- 65 to 200
230
°C
Value 400
Unit °C/W
Min. Typ. Max. Unit
70
V
0.41 V
1
0.2 µA
DYNAMIC CHARACTERISTICS
Symbol C τ
Test Conditions Tamb = 25°CVR = 0Vf = 1MHz Tamb = 25°CIF = 5mA Krakauer Method
Min. Typ. Max. Unit
2
pF
100 ps
* On infinite heatsink with 4mm lead length ** Pulse test: tp ® 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
October 2003 - Ed...
