BAQ800

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammopack. APPLICATIONS RF attenuator with low distortion for frequencies above 100 kHz. Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns BAQ800 DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and stress free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. k a MAM123 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 25 °C; lead length = 10 mm; see Fig.2 Tamb = 60 °C; printed-circuit board mounting (see Fig.17); see Fig.3 Tstg Tj storage temperature junction temperature CONDITIONS MIN. − − − − −65 −65 MAX. 100 100 1.25 600 +175 +150 V V A mA °C °C UNIT 1997 Aug 26 2 Philips Semiconductors Product specification AM PIN diode BAQ800 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity of this product. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see F...