BAP1321-04

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance For applications up to 3 GHz. k, 4 columns BAP1321-04 PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection 2 1 APPLICATIONS RF attenuators and switches. DESCRIPTION Two planar PIN diodes in series configuration in a SOT23 small SMD plastic package. 3 Top view MAM107 2 3 1 Marking code: 6Fp. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts ≤ 90 °C − − − −65 −65 60 100 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 2001 Apr 17 2 Philips Semiconductors Product specification Silicon PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd forward voltage reverse leakage current diode capacitance IF = 50 mA VR = 60 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance f = 100 MHz; note 1 IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA |s21|2 isolation VR = 0; f = 900 MHz VR = 0...