Silicon PIN Diode
BA 885
Silicon PIN Diode
q q q
BA 885
Current-controlled RF resistor for switching and attenuating applications Frequ...
Description
BA 885
Silicon PIN Diode
q q q
BA 885
Current-controlled RF resistor for switching and attenuating applications Frequency range 1 MHz … 2 GHz Especially useful as antenna switch in TV-sat tuners
Type BA 885
Marking PA
Ordering Code (tape and reel) Q62702-A608
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Rth JA
≤
Symbol VR IF Top Tstg
Values 50 50 – 55 … + 150
Unit V mA
– 55 … + 125 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BA 885
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 30 V Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance f = 100 MHz IF = 1.5 mA IF = 10 mA Zero bias conductance VR = 0 V, f = 100 MHz Series inductance Symbol min. VF IR CT – – rf – – gp LS – – 22 5 70 2 40 7 – – µS nH 0.28 0.23 0.6 0.4 Ω – – Values typ. – – max. 1.1 50 V nA pF Unit
Diode capacitance CT = f (VR) f = 1 MHz / 100 MHz
Forward resistance rf = f (IF) f = 100 MHz
Semiconductor Group
2
...
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