BA779S

BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test Conditions IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5mA f=100MHz, VR=0 IF=10mA, IR=10mA Type Symbol VF IR CD rf zr zr Min Typ Max 1 50 0.5 50 Unit V nA pF W BA779 BA779S t 5 9 4 kW kW ms Document Number 85532 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BA779.BA779S Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 100 IF – Forward Current ( mA ) a – Typical Cross Modulation Distortion ( dB ) 20 10 Tamb= 25°C 1 Scattering Limit 0.1 0 P–Circuit with 10 dB Attenuation V0 = 40 dB mV f1 = 100 MHz unmodulated –20 –40 –60 –80 0 20 40 60 80 f2, modulated with 200 kHz, m=100% (MHz) 0.01 0 95 9735 0.4 0.8 1.2 1.6 2.0 95 9733 VF – Forward Voltage ( V ) Figure 1. Forward Current vs. Forward Voltage Figure 3. Typ. Cross Mod...