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CY25AAJ-8F

Powerex Power Semiconductors

Nch IGBT for STROBE FLASHER

MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F Nch IGBT STROBE FLASHER Nch IGBT for for STROBE FLASHER CY25AAJ-...


Powerex Power Semiconductors

CY25AAJ-8F

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MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F Nch IGBT STROBE FLASHER Nch IGBT for for STROBE FLASHER CY25AAJ-8F OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“ Œ  Ž EMITTER  GATE  ‘ ’ “ COLLECTOR ŒŽ  q VCES ............................................................................... 400V q ICM ................................................................................... 150A q Drive voltage ..................................................................... 4V SOP-8 APPLICATION Strobe Flasher for camera MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature VGE = 0V VCE = 0V Conditions Ratings 400 ±6 ±8 150 –40 ~ +150 –40 ~ +150 Unit V V V A °C °C Sep. 2000 VCE = 0V, tw = 10s CM = 400µF see figure1 MITSUBISHI IGBT CY25AAJ-8F Nch IGBT for STROBE FLASHER ELECTRICAL CHARACTERISTICS Symbol Parameter (Tj = 25° C) Test conditions IC = 1mA, VGE = 0V IG = ± 100µA, VCE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 ±8 — — — Typ. — — — — — Max. — — 10 ±10 1.5 Unit V V µA µA V V (BR) CES Collector-emitter breakdown voltage V (BR) GES Gate-emitter breakdown voltage ICES IGES VGE (th) Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Figure1. MAXIMUM PULSE COLLECTOR CURRENT P...




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