HMBT8550

HI-SINCERITY MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 Description The HMBT8550 is designed for general purpose amplifier applications. Features High DC Current: hFE=150-400 at IC=150mA Complementary to HMBT8050 SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...................................................