HMBT8050

HI-SINCERITY MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 Description The HMBT8050 is designed for general purpose amplifier applications. Features High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550 SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................