HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Spec. No. : HE6812 Issued Date : 1992.08.25 Revis...
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL
TRANSISTOR
Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4
Description
The HMBT8050 is designed for general purpose amplifier applications.
Features
High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................................................