4 M SRAM (512-kword x 8-bit)
HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z) Rev. 6.0 Mar. 31, 2000 Description
The Hitachi HM62V851...
Description
HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z) Rev. 6.0 Mar. 31, 2000 Description
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512B is suitable for battery backup system.
Features
Single 3.0 V supply: 2.7 V to 3.6 V Access time: 70/85 ns (max) Power dissipation Active: 15 mW/MHz (typ) Standby: 3 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output: Three state output Directly LV-TTL compatible: All inputs Battery backup operation
HM62V8512B Series
Ordering Information
Type No. HM62V8512BLFP-7 HM62V8512BLFP-8 HM62V8512BLFP-7SL HM62V8512BLFP-8SL HM62V8512BLFP-7UL HM62V8512BLFP-8UL HM62V8512BLTT-7 HM62V8512BLTT-8 HM62V8512BLTT-7SL HM62V8512BLTT-8SL HM62V8512BLTT-7UL HM62V8512BLTT-8UL HM62V8512BLRR-7 HM62V8512BLRR-8 HM62V8512BLRR-7SL HM62V8512BLRR-8SL HM62V8512BLRR-7UL HM62V8512BLRR-8UL Access time 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 70 ns 85 ns 400-mil 32-pin plastic TSOP II reverse (TTP-32DR) 400-mil 32-pin plastic TSOP II (TTP-32D) Package 525-mil 32-pin plastic SOP (FP-32D)
2
HM62V8512B Series
Pin Arrangement
HM62V8512...
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