HM5551

HI-SINCERITY MICROELECTRONICS CORP. HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9507 Issued Date : 1996.04.09 Revised Date : 2004.11.24 Page No. : 1/4 Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. Features High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401 SOT-89 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base...