HPLU3103

HPLR3103, HPLU3103 Data Sheet July 1999 File Number 4501.2 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features Logic Level Gate Drive 52A†, 30V Low On-Resistance, rDS(ON) = 0.019Ω UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” † Calculated continuous current based on maximum allowable junction temperature. Package limited to 20A continuous, see Figure 9. Ordering Information PART NUMBER HPLU3103 HPLR3103 PACKAGE TO-251AA TO-252AA BRAND HP3103 HP3103 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T. S Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) 6-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © I...