256 k EEPROM (32-kword x 8-bit)
HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description
The Hitachi HN58S256A ...
Description
HN58S256A Series
256 k EEPROM (32-kword × 8-bit)
ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster.
Features
Single supply: 2.2 to 3.6 V Access time: 150 ns (max)/200 ns (max) Power dissipation: Active: 10 mW/MHz, (typ) Standby: 36 µW (max) On-chip latches: address, data, CE, OE, WE Automatic byte write: 15 ms (max) Automatic page write (64 bytes): 15 ms (max) Data polling and Toggle bit Data protection circuit on power on/off Conforms to JEDEC byte-wide standard Reliable CMOS with MNOS cell technology 105 erase/write cycles (in page mode) 10 years data retention Software data protection Industrial versions (Temperatur range:–40 to 85˚C) are also available.
HN58S256A Series
Ordering Information
Type No. HN58S256AT-15 HN58S256AT-20 Access time 150 ns 200 ns Package 28-pin plastic TSOP (TFP-28DB)
Pin Arrangement
HN58S256AT Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20 21 22 23 24 25 26 27 28 (Top view) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A3 A4 A5 A6 A7 A12 A14 VCC WE A13 A8 A9 A11 OE
Pin Description
Pin name A0 to A14 I/O0 to I/O7 OE CE WE VCC VSS Function Address input Data input/output Output enable Chip enable Write enable Power supply...
Similar Datasheet