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HN2D01F Dataheets PDF



Part Number HN2D01F
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Diode
Datasheet HN2D01F DatasheetHN2D01F Datasheet (PDF)

HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 (*).

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HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 (*) mA Average forward current IO 80 (*) mA Surge current (10 ms) IFSM 1 (*) A Power dissipation PD (Note 3) 300 mW Junction temperature Storage temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC JEITA TOSHIBA ― SC-74 1-3K1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.015g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (*) This is absolute maximum rating of single diode (Q1, Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Condition IF = 1 mA IF = 10 mA IF = 100 mA VR = 30 V VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA (Fig.1) Min Typ. Max Unit ― 0.62 ― ― 0.75 ― V ― 0.98 1.20 ― ― 0.1 μA ― ― 0.5 ― 0.5 3.0 pF ― 1.6 4.0 ns Start of commercial production 1988-11 © 2020-2021 1 Toshiba Electronic Devices & Storage Corporation 2021-06-25 Pin Assignment (Top View) Marking HN2D01F Fig.1 Reverse Recovery Time (trr) Test Circuit © 2020-2021 2 Toshiba Electronic Devices & Storage Corporation 2021-06-25 Characteristics Curves (Ta = 25°C) (Q1, Q2, Q3 Common) HN2D01F The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2020-2021 3 Toshiba Electronic Devices & Storage Corporation 2021-06-25 HN2D01F RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.  PRODUCT IS NEIT.


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