HMJE3055T

HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 Page No. : 1/4 Description The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0.6 W Ma...