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HMJE2955T

Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6736 Issued Date : 1992.12....


Hi-Sincerity Mocroelectronics

HMJE2955T

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Description
HI-SINCERITY MICROELECTRONICS CORP. HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6736 Issued Date : 1992.12.15 Revised Date : 2004.11.19 Page No. : 1/5 Description The HMJE2955T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W Total Power Dissipation (TA=25°C) ................................................................................................................... 0.6 W M...




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