HSM276ASR

HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features High forward current, Low capacitance. HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276ASR Laser Mark S20 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM276ASR Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device Symbol VRRM VR IO * Value 5 3 30 125 -55 to +125 Unit V V mA °C °C Tj Tstg Electrical Characteristics (Ta = 25°C) *2 Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *1 Symbol Min VR IR IF C ∆C — 3.0 — 35 — — 30 Typ — — — — — — Max — 50 — 0.90 0.10 — Unit V µA mA pF pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF, R= 0 Ω Both forward and reverse direction 1pulse. Notes : 1. Failure criterion ; IR ≥ 100 µA at V R =0.5 V 2. Per one device 2 HSM276ASR Main Characteristic 10 -1 10 -2 (A) 10 -2 Reverse current I R (A) 10 -3 Forward current IF 10 -3 Ta= 75°C 10 -4 Ta= 75°C 10 -4 Ta= 25°C 10 -5 Ta= 25°C 10 -5 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) -6 0 4.0 2.0 3.0 1.0 Reverse voltage ...