HSK122

HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-172B (Z) Rev. 2 Aug. 1995 Features High reverse voltage. (VR = 400V) LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSK122 Cathode band Orange Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK122 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Tj Tstg Value 410 400 625 1 150 175 –65 to +175 Unit V V mA A mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min — — — — Typ — — — — Max 1.2 1.0 10 10 Unit V µA pF ns Test Condition I F = 100mA VR = 400V VR = 0V, f = 1MHz I F = 30mA, VR = 10V, RL = 2kΩ 2 HSK122 1.0 Forward current I F (A) 10 –1 10 –2 10 –3 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 25°C Ta = 75°C Ta = 2 5°C Ta = –2 5°C Ta = 1 1.2 Fig.1 Forward current Vs. Forward voltage –6 10 Ta = 125°C 10 Reverse current I R (A) –7 Ta = 75°C –8 10 10 -9 Ta = 25°C 10 –10 Ta = –25°C 10 –11 0 300 100 400 200 Reverse voltage VR (V) 500 Fig.2 Reverse current Vs. Reverse voltage 3 HSK122 f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) ...