HSD879D

HI-SINCERITY MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2006.02.20 Page No. : 1/4 Description For 1.5V and 3v electronic flash use. Features Charger-up time is about 1 ms faster than of a germanium transistor. Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.4 W Maximum Voltages and Currents (TA=25°C) BVCBO Co...