HSD667A

HI-SINCERITY MICROELECTRONICS CORP. HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. Spec. No. : HE6510-B Issued Date : 1996.07.15 Revised Date : 2000.10.01 Page No. : 1/4 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 120 V VCEO Collector to Emitter Voltage ................................................................................... 100 V VEBO Emitter to Base Vol...