HI-SINCERITY
MICROELECTRONICS CORP.
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6728 Issued Date : 1993.04.12 ...
HI-SINCERITY
MICROELECTRONICS CORP.
HSD313
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2004.11.19 Page No. : 1/5
Description
The HSD313 is designed for use in general purpose amplifier and switching applications.
Absolute Maximum Ratings (TA=25°C)
TO-220
Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 2 W Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W
Max...