HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4
HSD1609S
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage ............................................