HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6606 Issued Date : 1993.03.15...
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/4
Features
Low frequency high voltage amplifier Complementary pair with HSB1109
Absolute Maximum Ratings (TA=25°C)
TO-126ML
Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................. 1.25 W
Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................................................