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HSD1159

Hi-Sincerity Mocroelectronics
Part Number HSD1159
Manufacturer Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Mar 26, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HSD1159 NPN EPITAXIAL PLANAR TRANSISTOR Description Capable of efficient drive with ...
Datasheet PDF File HSD1159 PDF File

HSD1159
HSD1159

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HSD1159 NPN EPITAXIAL PLANAR TRANSISTOR Description Capable of efficient drive with small internal loss due to excellent tf.
Spec.
No.
: HE6706-B Issued Date : 1993.
01.
13 Revised Date : 1999.
08.
01 Page No.
: 1/3 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .
.
-55 ~ +150 °C Junction Temperature .
.
.
+150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .
.
...


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