HSC945SP

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 2002.01.25 Page No. : 1/4 HSC945SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AF amplifier and low speed switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage......................................................................................... 60 V VCEO Collector to Emitter Voltage...................................................................................... 50 V VEBO Emitter to Base Voltage.............................................................................................. 5 V IC Collector Current........................................................................................................ 100 mA IB Base Current................................................................................................................ 50 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Co...