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HSC276A

Hitachi Semiconductor
Part Number HSC276A
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Mixer
Published Mar 26, 2005
Detailed Description HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836(Z) Rev 0 Feb. 2000 Features • High forward current, Low ca...
Datasheet PDF File HSC276A PDF File

HSC276A
HSC276A

Overview
HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836(Z) Rev 0 Feb.
2000 Features • High forward current, Low capacitance.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information Type No.
HSC276A Laser Mark S5 Package Code UFP Outline Cathode mark Mark 1 S5 2 1.
Cathode 2.
Anode HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 -55 to +125 Unit V V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol V...


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