HSC1959SP

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No. : 1/3 HSC1959SP NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1959Y is designed for audio frequency Low power amplifier applications. Features Execellent hFE linearity Complementary to HSA562 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 500 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 35 V VCEO Collector to Emitter Voltage ...............