HSC1959

HI-SINCERITY MICROELECTRONICS CORP. HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6524 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSC1959 is designed for audio frequency Low power amplifier applications. Features Excellent hFE Linearity TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 500 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................................................................