HSC119

HSC119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-615 (Z) Rev 0 Apr. 1998 Features Low capacitance. (C=2.0pF max) Short reverse recovery time. (trr =3.0ns max) Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC119 Laser Mark H1 Package Code UFP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSC119 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRM VR IO I FM I FSM Tj Tstg *1 Value 85 80 100 300 4 125 –55 to +125 Unit V V mA mA A °C °C 1. Within 1µs forward surge current. Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 IR C t rr Min — — — — — Typ — — — — — Max 0.8 1.2 0.1 2.0 3.0 µA pF ns Unit V Test Condition I F = 10 mA I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V RL=50Ω Notes 1. Reverse recovery time test circuit DC Supply 0.1µF 3k Ω Sampling Rin =50 Ω Oscilloscope Ro =50 Ω Pulse Generator Trigger 2 HSC119 Main Characteristic -4 1.0 10 10 Reverse current I R (A) -5 (A) Forward current IF 10 -1 10 10 10 10 10 -6 Ta=75°C Ta=50°C -7 Ta=25°C -8 10 -2 Ta= 75° C Ta= 25°C Ta=25°C -9 -10 10 -3 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V F (V) -11 0 20 40 60 80 100 Reverse voltage V R ...