HSB276S

HSB276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-780 (Z) Rev 0 Mar. 1999 Features High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB276S Laser Mark C2 Package Code CMPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB276S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note 1. Per one device Symbol VR IO *1 Value 3 30 125 -55 to +125 Unit V mA °C °C Tj Tstg Electrical Characteristics (Ta = 25°C) *2 Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability Note Note *1 Symbol Min VR IR IF C ∆C  3  35   30 Typ       Max  50  0.90 0.10  Unit V µA mA pF pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse. 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V 2. Per one device 2 HSB276S Main Characteristic -2 10 -1 10 10 -2 10 -3 Forward current I F (A) Reverse current IR (A) 0.4 0.6 0.8 1.0 10 -3 10 -4 10 -4 10 -5 10 -5 10 0 0.2 Forward voltage V F (V) -6 0 1.0 2.0 3.0 4.0 5.0 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Rever...