HSB1109

HI-SINCERITY MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/4 Features Low frequency high voltage amplifier Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................. 1.25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................................................