HS1-6664RH

HS-6664RH-T Data Sheet July 1999 File Number 4609.1 Radiation Hardened 8K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control (G) simplifies system interfacing by allowing output data bus control in addition to the chip enable control (E). All bits are manufactured storing a logical “0” and can be selectively programmed for a logical “1” at any bit location. Features QML Class T, Per MIL-PRF-38535 Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - No Latch-Up, SEU LET >100MeV/mg/cm2 Transient Output Upset >5 x 108 RAD (Si)/s Fast Access Time - 35ns (Typical) Single 5V Power Supply, Synchronous Operation Single Pulse 10V Field Programmable NiCr Fuses On-Chip Address Latches, Three-State Outputs Low Standby Current <500µA (Pre-Rad) Low Operatin...