HS-6617RH

HS-6617RH August 1995 Radiation Hardened 2K x 8 CMOS PROM Pinouts 5 Features Total Dose 1 x 10 RAD (Si) Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716 Low Standby Power 1.1mW Max Low Operating Power 137.5mW/MHz Max Fast Access Time 100ns Max TTL Compatible Inputs/Outputs Synchronous Operation On Chip Address Latches Three-State Outputs Nicrome Fuse Links Easy Microprocessor Interfacing Military Temperature Range -55oC to +125oC 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW A7 A6 A5 A4 A3 A2 A1 A0 Q0 1 2 3 4 5 6 7 8 9 24 VDD 23 A8 22 A9 21 P 20 G 19 A10 18 E 17 Q7 16 Q6 15 Q5 14 Q4 13 Q3 Q1 10 Q2 11 GND 12 Description The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design techniques combine with CMOS processing to give this device high speed performance with very low power dissipation. On chip address latches are provided, allowing easy interfacing with recent generation microprocessors that use multiplexed address/data bus structure, such as the HS-80C85RH or HS-80C86RH. The output enable control (G) simplifies microprocessor system interfacing by allowing output data bus control, in addition to, the chip enable control. Synchronou...