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HRW0703A

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRW0703A Silicon Schottky Barrier Diode for Rectifying ADE-208-110E (Z) Rev 5 Oct. 1997 Features • Low forward voltage ...



HRW0703A

Hitachi Semiconductor


Octopart Stock #: O-171935

Findchips Stock #: 171935-F

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Description
HRW0703A Silicon Schottky Barrier Diode for Rectifying ADE-208-110E (Z) Rev 5 Oct. 1997 Features Low forward voltage drop and suitable for high effifiency rectifying. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0703A Laser Mark S8 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HRW0703A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V *1 RRM Value 30 700 Unit V mA A °C °C I F*1 IFSM Tj *2 5 125 -55 to +125 Tstg 1. See from Fig.4 to Fig.7, with polyimide board 2. 50Hz sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth1(j-a) Rth2(j-a) Note 1. Polyimide board 20hx15wx0.8t 1.5 Min — — — Typ — — 150 390 290 Max 0.50 100 — Unit V µA pF Test Condition I F = 700 mA VR = 30V VR = 0V, f = 1MHz ° C/W Polyimide board *1 ° C/W Ceramic board *2 3.0 1.5 1.5 0.8 Unit: mm Note 2. Ceramic board 20hx15wx0.65t 4.2 2.0 2.0 Unit: mm 2 HRW0703A Main Characteristic 10 -1 Pulse test -2 10 Pulse test Forward current I F (A) 10 1.0 Ta=75°C Reverse current I R (A) 10 -3 Ta=75°C Ta=25°C 10 -1 10 -4 10 -5 Ta=25°C 10 -2 0 0.2 0.4 0.6 0.8 1.0 10 -6 0 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward v...




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