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HRW0702A

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E(Z) Rev 5 Oct. 1997 Features • Low forward voltage d...


Hitachi Semiconductor

HRW0702A

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HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E(Z) Rev 5 Oct. 1997 Features Low forward voltage drop and suitable for high effifiency rectifying. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0702A Laser Mark S15 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HRW0702A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 20 700 1.4 5 125 -55 to +125 Unit V mA A A °C °C I F* 1 I FM I FSM *2 Tj Tstg Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth(j-a) Min — — — — Typ — — 120 340 Max 0.43 200 — — Unit V µA pF Test Condition I F = 700 mA VR = 20V VR = 0V, f = 1 MHz ° C/W Polyimide board *1 Notes 1. Polyimide board 20hx15wx0.8t 1.5 3.0 1.5 1.5 0.8 Unit: mm 2 HRW0702A Main Characteristic -1 10 Pulse test 1.0 Ta=75°C 10 -1 10 Pulse test -2 10 Reverse current I R (A) Forward current IF (A) 10 -3 Ta=75°C Ta=25°C 10 -2 10 -4 Ta=25°C 10 -5 10 -3 10 -4 0 0.2 0.4 0.6 0.8 1.0 10 -6 0 5 10 15 20 25 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current ...




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