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HRW0202

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E (Z) Rev 5 Jul. 1998 Features • Low forward voltage ...


Hitachi Semiconductor

HRW0202

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HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E (Z) Rev 5 Jul. 1998 Features Low forward voltage drop and suitable for high effifiency rectifying. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0202A Laser Mark S17 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HRW0202A Absolute Maximum Ratings (Ta = 25°C) *1 Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *2 RRM Value 20 200 Unit V mA A °C °C I O*2 I FSM Tj Tstg *3 3 125 –55 to +125 Notes 1. Two device total Notes 2. See from Fig.4 to Fig.7 Notes 3. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) *1 Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min — — — Typ — — 350 Max 0.40 50 — Unit V µA Test Condition I F = 100 mA VR = 20V ° C/W Polyimide board *2 Notes 1. Per one device Notes 2. Polyimide board 20hx15wx0.8t 1.5 3.0 1.5 1.5 0.8 Unit: mm 2 HRW0202A Main Characteristic 1.0 Pulse test 10 –1 10 –3 Pulse test –4 Forward current I F (A) 10 –2 Ta = 75°C Reverse current I R (A) 10 Ta = 75°C 10 –5 10 –3 Ta = 25°C 10 –6 10 –4 Ta = 25°C 10 –5 10 –7 10 –6 0 0.1 0.2 0.3 0.4 0.5 0.6 10 –8 0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 15 20 5 10 Reverse voltage VR (V) 25 Fig.2 Reverse current...




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