HRF3205

HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. NOTE: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9. Features 100A, 55V (See Note) Low On-Resistance, rDS(ON) = 0.008Ω Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HRF3205 HRF3205S PACKAGE TO-220AB TO-263AB BRAND HRF3205 HRF3205S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST. Packaging JEDEC TO-220AB DRAIN (FLANGE) GATE SOURCE DRAIN GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation HRF3205, HRF3205S Rev. B HRF3205, HRF3205S TC = 25oC, Unless Othewise Specified ...