HRC0203B
Silicon Schottky Barrier Diode for Rectifying
ADE-208-800(Z) Rev 0 June. 1999 Features
• Low forward voltage d...
HRC0203B
Silicon
Schottky Barrier Diode for Rectifying
ADE-208-800(Z) Rev 0 June. 1999 Features
Low forward voltage drop and suitable for high effifiency rectifying. Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HRC0203B Laser Mark S2 Package Code UFP
Outline
Cathode mark Mark 1
S2
2 1. Cathode 2. Anode
HRC0203B
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRRM I o*1
*1
Value 30 200
Unit V mA A °C °C
IFSM
Tj
*2
3 125 -55Å`+125
Tstg
1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min — — — Typ — — 500 Max 0.52 10 — Unit V µA Test Condition I F = 200 mA VR = 30V
° C/W Polyimide board *1
Polyimide board
20hx15wx0.8t
1.5
3.0
0.8
1.5
Unit: mm
2
HRC0203B
Main Characteristic
-2
1.0 Pulse test 10
Forward current I F (A)
-1
10
Pulse test 10
-3
10
-2
Reverse current I R (A)
Ta=75°C
10
-4
10
-3
Ta=25°C
Ta=75°C 10
-5
10
-4
Ta=25°C 10
-6
10
-5
10
-6
0
0.2
0.4
0.6
0.8
1.0
10 0
-7
10
20
30
40
50
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 0.6
0V
0.30 0.25
Reverse power dissipation Pd (W)
0A t T Tj =25°C
Forward p...