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HRB0502A

Hitachi Semiconductor

Silicon Schottky Barrier Diode

HRB0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-609(Z) Rev 0 Mar. 1998 Features • Low forward voltage dr...


Hitachi Semiconductor

HRB0502A

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HRB0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-609(Z) Rev 0 Mar. 1998 Features Low forward voltage drop and suitable for high efficincy rectifying. CMPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0502A Laser Mark E3 Package Code CMPAK Outline 3 2 1 1 NC 2 Anode 3 Cathode (Top View) HRB0502A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Symbol VRRM I O*1 *2 Value 20 500 5 125 –55 to +125 Unit V mA A °C °C Non-Repetitive peak forward I FSM surge current Junction temperature Storage temperature Tj Tstg Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth(j-a) Min — — — — Typ — — 120 450 Max 0.4 200 — — Unit V µA pF Test Condition I F = 500 mA VR = 20V VR = 0V, f = 1 MHz ° C/W Polyimide board *1 Notes 1. Polyimide board 20hx15wx0.8t 1.5 3.0 2.0 0.8 Unit: mm 1.5 2 HRB0502A Main Characteristic -1 10 Pulse test 1.0 Ta=75°C 10 -1 10 Pulse test -2 10 Reverse current I R (A) Forward current IF (A) 10 -3 Ta=75°C Ta=25°C 10 -2 10 -4 Ta=25°C 10 -5 10 -3 10 -4 0 0.2 0.4 0.6 0.8 1.0 10 -6 0 5 10 15 20 25 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 2 f=1MHz Pulse tes...




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