HVM14

HVM14 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-082C (Z) Rev. 3 May 1993 Features Low forward resistance. (rf = 7.0 max) Low capacitance. (C = 0.25pFtyp) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM14 Laser Mark H5 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HVM14 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 100 125 –55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf — Min — — — — 200 Typ — — 0.25 — — Max 1.0 100 — 7.0 — Unit V nA pF Ω V Test Condition I F = 50mA VR = 50V VR = 50V, f = 1MHz I F = 10mA, f = 100MHz *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; IR ≥ 200nA at VR = 50V 10 –1 10 Forward current I F (A) –3 10 –5 10 –7 10 –9 10 –11 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 2 HVM14 10 –8 Reverse current I R (A) 10 –9 10 –10 10 –11 10 –12 0 10 40 30 20 Reverse voltage VR (V) 50 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 10 2 Fig.3 Capacitance Vs. Reverse voltage 3 HVM14 10 4 f = 100MHz F...